By Jianye Li, Deli Wang, Ray R LaPierre
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Additional info for Advances in III-V Semiconductor Nanowires and Nanodevices
However, due to the lack of native substrates, conventional III-nitride planar heterostructures generally exhibit very high densities of dislocations, which severely limit the device performance and reliability. Nearly defect-free III-nitride nanowire heterostructures, on the other hand, can be achieved on Si or other substrates, due to the highly effective lateral stress relaxation. Additionally, the use of nanowires provides an effective approach to scale down the dimensions of future devices and systems.
5, III-nitride nanowire devices, including nanoscale transistors, LEDs, lasers, and solar cells are presented. Finally, the challenges and future prospects of III-nitride nanowires are briefly discussed in Sec. 6. GROWTH TECHNIQUES AND MECHANISMS III-nitride semiconductor nanowires with diameters of tens of nanometers and lengths of several microns, or longer, have been realized utilizing various growth/synthesis techniques, including dry etching, direct reaction between Ga or In metals or NH3, chemical vapor deposition (CVD), molecular beam epitaxy (MBE), chemical beam epitaxy (CBE), and hydride vapor phase epitaxy (HVPE).
B) (a) 200nm 500nm Figure 3: (a) SEM image with a zoomed-in image in the inset of GaN nanowires grown on clean Si(111) substrates. Reprinted with permission from Ref. . Copyright 2008 Wiley InterScience. (b) SEM of a GaN nanowire array consisting of 1 µm GaN nanowires (inset shows plan view and reveals the hexagonal symmetry of the nanowires). Reprinted with permission from Ref. . Copyright 2006 American Chemical Society. 26eV PL Intensity (arb. 50 Figure 4: Temperature-dependent PL spectra from Mg-doped GaN nanowires.